AOT42S60/aob42s60 600v 37a a aa a mos tm power transistor general description product summary v ds @ t j,max 700v i dm 166a r ds(on),max 0.109 w q g,typ 40nc e oss @ 400v 9.2 m j 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: AOT42S60l & aob42s60l symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode recovery dv/dt h t j , t stg t l symbol r q ja r q cs r q jc 20 a 11 w mj mj avalanche current c junction and storage temperature range t c =25c dv/dt power dissipation b single pulsed avalanche energy g 234 1345 417 0.3 3.3 p d repetitive avalanche energy c AOT42S60/aob42s60 va 166 t c =100c pulsed drain current c continuous drain current t c =25c the AOT42S60 & aob42s60 have been fabricated using the advanced a mos tm high voltage process that is designed to deliver high levels of performance and robustness in switching applications. by providing low r ds(on) , q g and e oss along with guaranteed avalanche capability these devices can b e adopted quickly into new and existing offline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted drain-source voltage i d 30 gate-source voltage 37 23 600 AOT42S60/aob42s60 c/w w/ o c c thermal characteristics maximum junction-to-case c/w derate above 25 o c parameter c/w maximum case-to-sink a units v/ns maximum junction-to-ambient a,d 300 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds j c 65 0.5 -55 to 150 100 g ds to-263 d2pak s g top view g d s to-220 AOT42S60 aob42s60 rev3: nov 2012 www.aosmd.com page 1 of 6
AOT42S60/aob42s60 symbol min typ max units 600 - - 650 700 - - - 1 - 10 - i gss gate-body leakage current - - 100 n a v gs(th) gate threshold voltage 2.5 3.2 3.8 v - 0.095 0.109 w - 0.27 0.31 w v sd - 0.84 - v i s maximum body-diode continuous current - - 37 a i sm - - 166 a c iss - 2154 - pf c oss - 135 - pf c o(er) - 103 - pf c o(tr) - 344 - pf c rss - 2.7 - pf r g - 1.7 - w q g - 40 - nc q gs - 11.7 - nc q gd - 11.9 - nc t d(on) - 38.5 - ns t r - 53 - ns t d(off) - 136 - ns t f - 46 - ns t rr - 473 - ns i rm - 38.5 - a q rr - 10.5 - m c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. peak reverse recovery current i f =21a,di/dt=100a/ m s,v ds =400v v v gs =10v, i d =21a, t j =150c drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c m a v ds =0v, v gs =30v v ds =600v, v gs =0v v ds =5v,i d =250 m a v ds =480v, t j =150c zero gate voltage drain current body diode reverse recovery charge i f =21a,di/dt=100a/ m s,v ds =400v maximum body-diode pulsed current turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime body diode reverse recovery time i f =21a,di/dt=100a/ m s,v ds =400v reverse transfer capacitance bv dss v gs =10v, v ds =400v, i d =21a, r g =25 w turn-off fall time total gate charge v gs =10v, v ds =480v, i d =21a gate source charge gate drain charge v gs =10v, i d =21a, t j =25c switching parameters i dss effective output capacitance, time related i r ds(on) static drain-source on-resistance i s =21a,v gs =0v, t j =25c diode forward voltage input capacitance v gs =0v, v ds =100v, f=1mhz output capacitance v gs =0v, v ds =100v, f=1mhz gate resistance v gs =0v, v ds =0v, f=1mhz electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i d =250 a, v gs =0v, t j =150c effective output capacitance, energy related h v gs =0v, v ds =0 to 480v, f=1mhz a. the value of r q ja is measured with the device in a still air environ ment with t a =25c. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is use d. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c, ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. g. l=60mh, i as =6.7a, v dd =150v, starting t j =25c h. c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss. i. c o(tr) is a fixed capacitance that gives the same chargin g time as c oss while v ds is rising from 0 to 80% v (br)dss. j. wavesoldering only allowed at leads. rev3: nov 2012 www.aosmd.com page 2 of 6
AOT42S60/aob42s60 typical electrical and thermal characteristics 0 10 20 30 40 50 60 70 80 0 5 10 15 20 v ds (volts) figure 1: on-region characteristics@25c i d (a) v gs =4.5v 6v 10v 7v 0.01 0.1 1 10 100 1000 2 3 4 5 6 7 8 9 10 v gs (volts) figure 3: transfer characteristics i d (a) -55c v ds =20v 25c 125c 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 15 30 45 60 75 90 i d (a) figure 4: on-resistance vs. drain current and gate voltage r ds(on) ( w ww w ) v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 5: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =21a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j ( o c) figure 6: break down vs. junction temperature bv dss (normalized) 0 10 20 30 40 50 60 0 5 10 15 20 v ds (volts) figure 2: on-region characteristics@125c i d (a) v gs =4.5v 5v 10v 6v 5v 5.5v 5.5v 7v rev3: nov 2012 www.aosmd.com page 3 of 6
AOT42S60/aob42s60 typical electrical and thermal characteristics 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds (volts) i d (amps) figure 11: maximum forward biased safe operating area for aot(b)42s60(note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s 0 3 6 9 12 15 0 15 30 45 60 q g (nc) figure 8: gate-charge characteristics v gs (volts) v ds =480v i d =21a 1 10 100 1000 10000 0 100 200 300 400 500 600 v ds (volts) figure 9: capacitance characteristics capacitance (pf) c iss c oss c rss 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 7: body-diode characteristics (note e) i s (a) 25c 125c 0 4 8 12 16 20 0 100 200 300 400 500 600 v ds (volts) figure 10: coss stored energy eoss(uj) e oss rev3: nov 2012 www.aosmd.com page 4 of 6
AOT42S60/aob42s60 typical electrical and thermal characteristics 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 t case (c) figure 13: current de-rating (note b) current rating i d (a) 0 300 600 900 1200 1500 25 50 75 100 125 150 175 t case (c) figure 12: avalanche energy e as (mj) 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 14: normalized maximum transient thermal imp edance for aot(b)42s60(note f) z q qq q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.3c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev3: nov 2012 www.aosmd.com page 5 of 6
AOT42S60/aob42s60 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev3: nov 2012 www.aosmd.com page 6 of 6
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